Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics

: In this work we theoretically investigate quantum confined Stark effect of intersubband transitions in asymmetric Ge/SiGe quantum wells for intensity modulation in the mid-infrared. Our calculations show that extinction ratios up to 1 dB and modulation speeds of several tens of GHz could be obtained in 100 µm long waveguides

Low-Power consumption Franz-Keldysh effect plasmonic modulator

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm long modulator is demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption is as low as 20 fJ/bit

QPSK Modulation in the O-Band Using a Single Dual-Drive Mach Zehnder Silicon Modulator

[EN] Keeping up with bandwidth requirements in next generation short- and long-reach optical communication systems will require migrating from simple modulation formats such as on-off keying to more advanced formats such as quaternary phase-shift keying (QPSK). In this paper, we report the first demonstration of QPSK signal generation in the O-band using a silicon dual-drive Mach-Zehnder modulator (DD-MZM). The performance of the silicon DD-MZM is assessed at 20 Gb/s and compared against a similar DD-MZM based on LiNbO3, showing a limited implementation power penalty of only 1.5 dB.This work was supported in part by the European project Plat4m (FP7-2012-318178); European project Cosmicc (H2020-ICT-27-2015- 688516); French Industry Ministry Nano2017 program.Pérez-Galacho, D.; Bramerie, L.; Baudot, C.; Chaibi, M.; Messaoudène, S.; Vulliet, N.; Vivien, L.... (2018). QPSK Modulation in the O-Band Using a Single Dual-Drive Mach Zehnder Silicon Modulator. Journal of Lightwave Technology. 36(18):3935-3940. https://doi.org/10.1109/JLT.2018.2851370S39353940361

Ge-rich graded-index SiGe alloys: exploring a versatile platform for mid-IR photonics

International audienceIn this paper, the recent progress on a new Ge-rich SiGe platform for mid-IR integrated photonics is presented. Low-loss spiral waveguides working over a broadband wavelength range are discussed, followed by a sensing proof-of-concept using a standalone photoresist with a known spectral absorption pattern. In addition, the development of new mid-IR interferometric devices for wavelength filtering and enhancement of the light-matter interaction are presented. Finally, efficient designs to exploit the third-order nonlinearities in these Ge-rich SiGe waveguides at mid-IR wavelengths are shown. The demonstration of these key building blocks will pave the way towards the implementation of new mid-IR photonic integrated systems with multiple functionalities

Silicon-on-insulator polarization controller with relaxed fabrication tolerances

Polarization control is essential in applications ranging from optical communications to interferometric sensors. The implementation of in- tegrated polarization controllers is challenging as they require polariza- tion rotating waveguides with stringent fabrication tolerances. Here, we present a fully integrated polarization controller scheme that signi cantly relaxes the requirements on the rotating waveguides, alleviating fabri- cation tolerances. We analytically establish a technology-independent, easily measurable tolerance condition for the rotating waveguides. Po- larization control in the presence of waveguide width errors of 25% is shown through full vectorial simulation.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

Long-wave infrared integrated resonators in the 7.5-9 mu m wavelength range

We present broadband on-chip resonators based on SiGe graded-index waveguides operating in the long-wave infrared spectral range from 7.5 to 9.0 mu m wavelength range. A quality factor up to 10(5) has been measured, while an intrinsic quality factor of 1.13 x 10(5) has been extracted from the measurements. Thermal tuning of the phase in the micro-ring has been used to overcome the limitation of the experimental setup in terms of spectral resolution. These results pave the way toward the development of integrated frequency comb operating in the long-wave infrared range

Broadband Fourier-transform silicon nitride spectrometer with wide-area multiaperture input

4 pags., 5 figs.Integrated microspectrometers implemented in silicon photonic chips have gathered a great interest for diverse applications such as biological analysis, environmental monitoring, and remote sensing. These applications often demand high spectral resolution, broad operational bandwidth, and large optical throughput. Spatial heterodyne Fourier-transform (SHFT) spectrometers have been proposed to overcome the limited optical throughput of dispersive and speckle-based on-chip spectrometers. However, state-of-the-art SHFT spectrometers in near-infrared achieve large optical throughput only within a narrow operational bandwidth. Here we demonstrate for the first time, to the best of our knowledge, a broadband silicon nitride SHFT spectrometer with the largest light collecting multiaperture input (320 × 410 µm) ever implemented in an SHFT on-chip spectrometer. The device was fabricated using 248 nm deep-ultraviolet lithography, exhibiting over 13 dB of optical throughput improvement compared to a single-aperture device. The measured resolution varies between 29 and 49 pm within the 1260-1600 nm wavelength range.Spanish Ministry of Science and Innovation (MICINN) (RED2018-102768-T, RTI2018-097957-B-C33, TEC2015-71127-C2-1-R (FPI Scholarship BES-2016-077798)); Community of Madrid-FEDER funds (S2018/NMT-4326); Horizon 2020 Research and Innovation Program (Marie Sklodowska-Curie 734331); H2020 European Research Council (ERC POPSTAR 647342); European Commission (H2020- ICT-26127-2017 COSMICC 688516); French Industry Ministry (Nano2022 project under IPCEI program); Agence Nationale de la Recherche (ANR-MIRSPEC-17-CE09-004

Dual-band fiber-chip grating coupler in a 300 mm silicon-on-insulator platform and 193 nm deep-UV lithography

4 pags., 5 figs., 1 tab.Surface grating couplers are fundamental building blocks for coupling the light between optical fibers and integrated photonic devices. However, the operational bandwidth of conventional grating couplers is intrinsically limited by their wavelength-dependent radiation angle. The few dual-band grating couplers that have been experimentally demonstrated exhibit low coupling efficiencies and rely on complex fabrication processes. Here we demonstrate for the first time, to the best of our knowledge, the realization of an efficient dual-band grating coupler fabricated using 193 nm deep-ultraviolet lithography for 10 Gbit symmetric passive optical networks. The footprint of the device is 17 × 10 µm. We measured coupling efficiencies of −4.9 and −5.2 dB with a 3-dB bandwidth of 27 and 56 nm at the wavelengths of 1270 and 1577 nm, corresponding to the upstream and downstream channels, respectively.Spanish Ministry of Science, Innovation and Universities (MICINN) (RTI2018-097957-B-C33, TEC2015-71127-C2-1-R with FPI Scholarship BES-2016-077798); Community of Madrid - FEDER funds (S2018/NMT-4326); Horizon 2020 Research and Innovation Program (Marie Sklodowska-Curie 734331); H2020 European Research Council (ERC POPSTAR 647342); European Commission (H2020- ICT-26127-2017 COSMICC 688516); French Industry Ministry (Nano2022 project under IPCEI program); Agence Nationale de la Recherche (ANR-MIRSPEC-17-CE09-0041)

Ge-rich graded-index Si_1-xGex waveguides with broadband tight mode confinement and flat anomalous dispersion for nonlinear mid-infrared photonics

This work explores the use of Ge-rich graded-index Si1-xGex rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si1-xGex waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~1.4 octave span while retaining an optimum third-order nonlinear parameter, γeff. These results confirm the potential of Ge-rich graded-index Si1-xGex waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering